Enhancing Efficiency of CdS/CdTe Solar Cells with Double BSF Layer by Numerical Analysis

Cadmium telluride (CdTe) has emerged as a leading material for solar energy applications due to its high efficiency and affordability. This work primarily focused on optimizing the structure of CdTe-based solar cells to enhance their performance. The Solar Cell Capacitance Simulator (SCAPS-1D) was used to model and evaluate the performance of these solar cells. In this study, a CdTe cell without a back surface field (BSF) was used as the baseline model. The research showed that the standard CdTe cell with a 4000 nm thick absorber layer achieved an efficiency of $\mathbf{1 6. 4 1 \%}\left(\mathbf{J s c}=24.72 \mathrm{~mA} / \mathrm{cm}^{2}, \mathrm{FF}=\mathbf{7 6. 2 1 \%}\right.$, Voc = 0.87 V) without a BSF layer. A modified CdS/CdTe solar cell was then developed by introducing a 100 nm AZO buffer layer, reducing the CdTe absorber layer to $1 \mu \mathrm{~m}$, and adding a GeTe layer over MoTe2 as a BSF. The effect of incorporating a double BSF in the base cell was analyzed using the band diagram. The modified cell demonstrated a significantly higher efficiency of $\mathbf{2 8. 7 4 \%}$, with Jsc $=\mathbf{2 4. 9 4} \mathbf{~ m A} / \mathbf{c m}^{2}$, Voc $=\mathbf{1. 2 7} \mathrm{V}$, and FF $=\mathbf{9 0. 2 0 \%}$. The proposed cell showed enhanced stability at elevated working temperatures, with a low temperature coefficient of $\mathbf{- 0. 1 1 6 \%} /{ }^{\circ} \mathbf{C}$ for the $\mathrm{GeTe} / \mathrm{MoTe}_{2}$ double BSF layer. These findings highlight the potential for further research into using thinner CdTe absorber layers and $\mathrm{GeTe} / \mathrm{MoTe}_{2}$ BSF layers to boost efficiency in CdTe solar cell architectures.

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Published
2024-10-26
DOI
https://doi.org/10.1109/iciset62123.2024.10939955
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Enhancing Efficiency of CdS/CdTe Solar Cells with Double BSF Layer by Numerical Analysis

Tanvir Hossain, Md. Adnan Faisal Siddique, Mahmud Abdul Matin, Shohid Ullah Shykat
Chalcogenide Semiconductor Thin Films
article

Enhancing Efficiency of CdS/CdTe Solar Cells with Double BSF Layer by Numerical Analysis

Tanvir Hossain, Md. Adnan Faisal Siddique, Mahmud Abdul Matin, Shohid Ullah Shykat
article en

Abstract

Cadmium telluride (CdTe) has emerged as a leading material for solar energy applications due to its high efficiency and affordability. This work primarily focused on optimizing the structure of CdTe-based solar cells to enhance their performance. The Solar Cell Capacitance Simulator (SCAPS-1D) was used to model and evaluate the performance of these solar cells. In this study, a CdTe cell without a back surface field (BSF) was used as the baseline model. The research showed that the standard CdTe cell with a 4000 nm thick absorber layer achieved an efficiency of $\mathbf{1 6. 4 1 \%}\left(\mathbf{J s c}=24.72 \mathrm{~mA} / \mathrm{cm}^{2}, \mathrm{FF}=\mathbf{7 6. 2 1 \%}\right.$, Voc = 0.87 V) without a BSF layer. A modified CdS/CdTe solar cell was then developed by introducing a 100 nm AZO buffer layer, reducing the CdTe absorber layer to $1 \mu \mathrm{~m}$, and adding a GeTe layer over MoTe2 as a BSF. The effect of incorporating a double BSF in the base cell was analyzed using the band diagram. The modified cell demonstrated a significantly higher efficiency of $\mathbf{2 8. 7 4 \%}$, with Jsc $=\mathbf{2 4. 9 4} \mathbf{~ m A} / \mathbf{c m}^{2}$, Voc $=\mathbf{1. 2 7} \mathrm{V}$, and FF $=\mathbf{9 0. 2 0 \%}$. The proposed cell showed enhanced stability at elevated working temperatures, with a low temperature coefficient of $\mathbf{- 0. 1 1 6 \%} /{ }^{\circ} \mathbf{C}$ for the $\mathrm{GeTe} / \mathrm{MoTe}_{2}$ double BSF layer. These findings highlight the potential for further research into using thinner CdTe absorber layers and $\mathrm{GeTe} / \mathrm{MoTe}_{2}$ BSF layers to boost efficiency in CdTe solar cell architectures.

Chittagong University of Engineering & Technology (BD)
Affordable and clean energy
Openalex Percentile: Top 73%
Chalcogenide Semiconductor Thin Films
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