A Numerical Analysis for Optimization of MoTe<sub>2</sub>/Sb<sub>2</sub>S<sub>3</sub> Heterojunction Structure for High-Efficiency Solar Cell

Employing the SCAPS-1D simulator, this research explores the effectiveness of adding an Antimony Sulfide (Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)Hole Transport Layer (HTL) to a Molybdenum Telluride (MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) solar cell structure. MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> has affordability and stable performance, alongside excellent high optical absorption capabilities. In this study, a new solar cell setup (Al/FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Pt) with a baseline configuration of (Al/FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Pt) is studied. This investigation has reviewed several aspects, such as the surface recombination velocity, the thickness of the active and HTL, the doping density of the active, the relationship between current and voltage, the defect density, and the series and shunt resistances. The suggested cell impressively demonstrates notable enhancements, obtaining FF = 87.65%, Jsc=40.77 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, Voc = 1.12 V, and PCE = 40.29%. By comparison, the standard cell has the following values: FF = 81.13%, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf> = 38.17 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, Voc = 0.96 V, and η = 29.41%. By integrating the Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> material, effectively reduced carrier recombination losses, leading to the emergence of cost-effective, high-performance MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> PV cells.

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Published
2024-11-01
DOI
https://doi.org/10.1109/spicscon64195.2024.10940455
Citations
2
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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A Numerical Analysis for Optimization of MoTe2/Sb2S3 Heterojunction Structure for High-Efficiency Solar Cell

Md Arifur Rahman, Md. Hasan Ali, Shyamal Kumar Paul, Md. Dulal Haque et al.
2 citations
Chalcogenide Semiconductor Thin Films
0.42
article

A Numerical Analysis for Optimization of MoTe2/Sb2S3 Heterojunction Structure for High-Efficiency Solar Cell

Md Arifur Rahman, Md. Hasan Ali, Shyamal Kumar Paul, Md. Dulal Haque, Md. Jahangir Alam, Abu Zafor Md. Touhidul Islam
article en
2 citations

Abstract

Employing the SCAPS-1D simulator, this research explores the effectiveness of adding an Antimony Sulfide (Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)Hole Transport Layer (HTL) to a Molybdenum Telluride (MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) solar cell structure. MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> has affordability and stable performance, alongside excellent high optical absorption capabilities. In this study, a new solar cell setup (Al/FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Pt) with a baseline configuration of (Al/FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Pt) is studied. This investigation has reviewed several aspects, such as the surface recombination velocity, the thickness of the active and HTL, the doping density of the active, the relationship between current and voltage, the defect density, and the series and shunt resistances. The suggested cell impressively demonstrates notable enhancements, obtaining FF = 87.65%, Jsc=40.77 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, Voc = 1.12 V, and PCE = 40.29%. By comparison, the standard cell has the following values: FF = 81.13%, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf> = 38.17 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, Voc = 0.96 V, and η = 29.41%. By integrating the Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> material, effectively reduced carrier recombination losses, leading to the emergence of cost-effective, high-performance MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> PV cells.

Begum Rokeya University (BD), Bangladesh University of Engineering and Technology (BD), Hajee Mohammad Danesh Science and Technology University (BD), University of Chittagong (BD), University of Rajshahi (BD)
Affordable and clean energy
Openalex Percentile: Top 35%
Chalcogenide Semiconductor Thin Films
0.42
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