Design of A 26/36 GHz Dual‐Band GaN MMIC Power Amplifier

ABSTRACT This letter presents a design of a dual‐band power amplifier (PA) monolithic microwave integrated circuit (MMIC). A modified dual‐band component based bias integrated dual‐band matching circuit is employed for both input and output network to achieve small size and low loss. For demonstration, one dual‐band PA is designed using 0.15 μm GaN‐on‐SiC process at 28/39 GHz. The fabricated PA achieves peak output power of 31.4 and 29 dBm at the measured frequency of 26 and 36 GHz, respectively, while the measured maximum drain efficiency (DE) is 51.1% and 27.8% at the two frequencies. The proposed dual‐band PA occupies an area of 1.4 mm × 1 mm including pads.