Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing

We report on the first cryogenic characterization of a nMOS nanosheet transistor down to 1.2 K. We demonstrate that the device operates at low temperatures both in the transistor regime with improved DC characteristics (subthreshold swing) and in the quantum regime with adjustable charge occupation of the quantum dot down to a single electron. We further perform extensive low-frequency charge noise measurements in the quantum dot regime over a broad range of charge occupation numbers and observe low average charge noise of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\left \lt {{ {S}_{{0}}}}\right \gt = {28} \pm {10}\; \mu \textit {eV}/\sqrt {\textit {Hz}}$ </tex-math></inline-formula> at 1 Hz. These results demonstrate that nanosheet transistors are promising for large scale quantum/classical co-integration of CMOS devices for quantum information processing applications.