Study on single event effects of diamond Schottky diodes based on TCAD simulation

In order to obtain the Single-Event Burnout (SEB) characteristics of the diamond Schottky barrier diode (SBD), the two-dimensional model of the device was established by using the TCAD simulation tool, and the positive characteristics of the experimental diamond Schottky diode were used to calibrate the established simulation model. On this basis, the diamond SBD devices irradiated by high-energy Ge ions were studied by combining the SRIM and TCAD software, and the influence of reverse bias voltage, linear energy transfer (LET) value, and the depth of incidence on the single event effect during the irradiation process was revealed. The simulation results show that the increase in lattice temperature caused by the incident of heavy ions is positively correlated with the bias voltage, LET value, and incident depth. When the bias voltage, LET value, and depth of incidence reach a certain level, the local lattice temperature inside the device may exceed the melting point of the diamond material, resulting in the occurrence of SEB. Conversely, when these parameters are at low levels, the increase in lattice temperature caused by the incident of heavy ions is not sufficient to reach the melting point of the diamond, thus avoiding the occurrence of burnout. The related work provides a solid theoretical basis for the reliability evaluation and anti-radiation reinforcement design of diamond SBD power devices against SEB.