Revisiting Multiple ECC on High-Density NAND Flash memory

Three-dimensional <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> flash memory using the advanced multibit-per-cell technique is widely adopted due to its high density. However, it faces the problem of deteriorating read performance and energy consumption due to decreased reliability. Low-density parity-check code (LDPC) is typically adopted as an error correction code (ECC) to encode data and provide fault tolerance. To reduce the cost, LDPC with a high code rate is always adopted. However, LDPC will lead to read retry operations when the accessed data are not successfully decoded, and such retry-induced performance degradation is serious, especially for modern high-density flash memory. In this work, a reliability-aware differential ECC (READECC) approach is proposed to reduce redundancy protection and storage cost of LDPC with a low code rate and optimize the read performance. The basic idea is to adopt LDPC with a suitable code rate considering both data access characteristics and flash reliability characteristics. First, hot reads are identified based on the frequency of being accessed. Second, based on the reliability variation characteristics, the life of flash memory is divided into three reliability periods. As the reliability period shifts, the code rate of the LDPC adjusts adaptively to minimize redundancy protection. Third, an adaptive-sized logical page approach is further proposed to support LDPC with strong error correction capability (a low code rate) with a low storage cost. Through careful design and evaluation on 3-D triple-level-cell <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> flash memory, READECC achieves encouraging optimizations with a negligible cost.

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Publication Details

Journal
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Published
2025-04-01
DOI
https://doi.org/10.1109/tvlsi.2025.3551400
Primary Topic
Advanced Data Storage Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Revisiting Multiple ECC on High-Density NAND Flash memory

Yina Lv, Jialin Liu, Wentong Li, Liang Shi et al.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Advanced Data Storage Technologies
article

Revisiting Multiple ECC on High-Density NAND Flash memory

Yina Lv, Jialin Liu, Wentong Li, Liang Shi, Yunpeng Song
article en

Abstract

Three-dimensional <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> flash memory using the advanced multibit-per-cell technique is widely adopted due to its high density. However, it faces the problem of deteriorating read performance and energy consumption due to decreased reliability. Low-density parity-check code (LDPC) is typically adopted as an error correction code (ECC) to encode data and provide fault tolerance. To reduce the cost, LDPC with a high code rate is always adopted. However, LDPC will lead to read retry operations when the accessed data are not successfully decoded, and such retry-induced performance degradation is serious, especially for modern high-density flash memory. In this work, a reliability-aware differential ECC (READECC) approach is proposed to reduce redundancy protection and storage cost of LDPC with a low code rate and optimize the read performance. The basic idea is to adopt LDPC with a suitable code rate considering both data access characteristics and flash reliability characteristics. First, hot reads are identified based on the frequency of being accessed. Second, based on the reliability variation characteristics, the life of flash memory is divided into three reliability periods. As the reliability period shifts, the code rate of the LDPC adjusts adaptively to minimize redundancy protection. Third, an adaptive-sized logical page approach is further proposed to support LDPC with strong error correction capability (a low code rate) with a low storage cost. Through careful design and evaluation on 3-D triple-level-cell <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> flash memory, READECC achieves encouraging optimizations with a negligible cost.

IEEE Transactions on Very Large Scale Integration (VLSI) SystemsVol. 33(6)
Xiamen University (CN), East China Normal University (CN)
Changsha Science and Technology Project
Affordable and clean energy
Openalex Percentile: Top 94%
Advanced Data Storage Technologies
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