Piezoplasmonic System for Enhanced Photonic Spin Hall Effect for Applications in Optical Refractive Index Sensing

The interplay of intense spin-orbit interactions (SOIs) with plasmonic and piezoelectric surfaces offers a promising solution for precise control over polarization states and wavefront shaping. Reconfigurable beam manipulation, driven by variable voltage and SOIs, has emerged as a key focus in advancing optical systems. Despite this potential, the mechanical rigidity of piezoelectric materials and their inherently static optical properties post-fabrication present significant challenges, restricting their adaptability and dynamic functionality. This study explores the integration of plasmonic and piezoelectric materials to overcome these limitations, enabling voltage-controlled modulation of refractive index and thickness for tunable SOIs. In this manuscript, the photonic spin Hall effect (PSHE), arising from the SOI of light, is demonstrated in a layered structure consisting of silver (Ag), the piezoelectric material PMN-PT, and an additional Ag layer. By applying a voltage bias (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>B</sub></i>) of –5.874 V, left-hand circular polarization achieves a maximum conventional spin dependent shift (CSDS) of 143.357 μm for a PMN-PT layer thickness of 387 nm, outperforming previously reported PSHE studies. Further, the proposed PSHE framework demonstrates potential for antigen or complementary DNA detection, owing to the exceptional tunability of PMN-PT. A spin-dependent sensitivity of 610430.50 μm/RIU is achieved at a refractive index change of Δn = 1 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> under a voltage bias of –5.874 V for complementary DNA sensing. Furthermore, the proposed sensor design (str-3) exhibits an extraordinary limit of detection (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\bm{Lo}}{{{\bm{D}}}_{{\bm{sd}}}}$</tex-math></inline-formula>) of 1.638 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> degree. RIU/μm, marking a significant advancement in precision optical sensing.

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Publication Details

Journal
IEEE Journal of Selected Topics in Quantum Electronics
Published
2025-04-01
DOI
https://doi.org/10.1109/jstqe.2025.3556890
Citations
4
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
2.92
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article

Piezoplasmonic System for Enhanced Photonic Spin Hall Effect for Applications in Optical Refractive Index Sensing

Jitendra Bahadur Maurya, Yogendra Kumar Prajapati, Vinit Kumar
4 citations
IEEE Journal of Selected Topics in Quantum Electronics
Photonic and Optical Devices
2.92
article

Piezoplasmonic System for Enhanced Photonic Spin Hall Effect for Applications in Optical Refractive Index Sensing

Jitendra Bahadur Maurya, Yogendra Kumar Prajapati, Vinit Kumar
article en
4 citations

Abstract

The interplay of intense spin-orbit interactions (SOIs) with plasmonic and piezoelectric surfaces offers a promising solution for precise control over polarization states and wavefront shaping. Reconfigurable beam manipulation, driven by variable voltage and SOIs, has emerged as a key focus in advancing optical systems. Despite this potential, the mechanical rigidity of piezoelectric materials and their inherently static optical properties post-fabrication present significant challenges, restricting their adaptability and dynamic functionality. This study explores the integration of plasmonic and piezoelectric materials to overcome these limitations, enabling voltage-controlled modulation of refractive index and thickness for tunable SOIs. In this manuscript, the photonic spin Hall effect (PSHE), arising from the SOI of light, is demonstrated in a layered structure consisting of silver (Ag), the piezoelectric material PMN-PT, and an additional Ag layer. By applying a voltage bias (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>B</sub></i>) of –5.874 V, left-hand circular polarization achieves a maximum conventional spin dependent shift (CSDS) of 143.357 μm for a PMN-PT layer thickness of 387 nm, outperforming previously reported PSHE studies. Further, the proposed PSHE framework demonstrates potential for antigen or complementary DNA detection, owing to the exceptional tunability of PMN-PT. A spin-dependent sensitivity of 610430.50 μm/RIU is achieved at a refractive index change of Δn = 1 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> under a voltage bias of –5.874 V for complementary DNA sensing. Furthermore, the proposed sensor design (str-3) exhibits an extraordinary limit of detection (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\bm{Lo}}{{{\bm{D}}}_{{\bm{sd}}}}$</tex-math></inline-formula>) of 1.638 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> degree. RIU/μm, marking a significant advancement in precision optical sensing.

IEEE Journal of Selected Topics in Quantum ElectronicsVol. 31(5: Quantum Materials and Quantum)
National Institute of Technology Patna (IN), Motilal Nehru National Institute of Technology (IN)
Affordable and clean energy
Openalex Percentile: Top 10%
Photonic and Optical Devices
2.92
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