Low‐Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri‐Layer Elastomer Dielectric for Gas Sensing
Abstract Stretchable organic field‐effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as excellent mechanical compatibility, flexibility, and signal amplification capabilities. However, achieving low‐voltage operation remains challenging, which limits their practical application. Herein, a tri‐layer dielectric design is developed to achieve low‐voltage, high‐mobility stretchable organic transistors for gas sensors. The tri‐layer dielectric, consisting of a high‐κ polymer film, a non‐polar polymer layer, and a cross‐linking layer, allows the transistors to operate at −5 V. The stretchable transistor‐based gas sensors exhibit high sensitivity of gas detection capability. Thus, stretchable field‐effect transistors based on tri‐layer dielectrics offer a promising strategy for advancing wearable gas sensors.
Authors
- Huiqi Yang
- Hongchen Jiang (ORCID: https://orcid.org/0000-0003-1271-7028)
- Hui Yang (ORCID: https://orcid.org/0000-0002-0178-7293)
- Xiaoying Zhang (ORCID: https://orcid.org/0000-0003-2576-0148)
- Xin Ye (ORCID: https://orcid.org/0000-0002-3277-7602)
- Weiyu Wang (ORCID: https://orcid.org/0000-0002-1341-6449)
- Xiangxiang Li (ORCID: https://orcid.org/0009-0001-4094-4888)
- Xinran Zheng
Institutions
- Tianjin University (CN)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1002/aelm.202400981
- Citations
- 6
- Primary Topic
- Advanced Sensor and Energy Harvesting Materials
- Type
- article
- Field-Weighted Citation Impact
- 4.04
Funders
- National Natural Science Foundation of China
- Ministry of Science and Technology of the People's Republic of China
- Natural Science Foundation of Tianjin City