Resonant defect states of the SnO<sub>2</sub>:Ta transparent conductive oxide revealed by excitation wavelength-dependent Raman spectroscopy and hybrid functional DFT calculations
Two delocalized V Sn - and one localized O i -type defect state(s) were identified at the upper edge of the valence band of the SnO 2 :Ta transparent conductive oxide and characterized.
Authors
- Matthias Krause (ORCID: https://orcid.org/0000-0003-3408-3572)
- Carlos Romero‐Muñiz (ORCID: https://orcid.org/0000-0001-6902-1553)
- Dietrich R. T. Zahn (ORCID: https://orcid.org/0000-0002-8455-4582)
- R. Escobar Galindo (ORCID: https://orcid.org/0000-0001-9952-9489)
- Oleksandr Selyshchev (ORCID: https://orcid.org/0000-0002-4883-2311)
Institutions
- Chemnitz University of Technology (DE)
- Helmholtz-Zentrum Dresden-Rossendorf (DE)
- Universidad de Sevilla (ES)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ta08693g
- Citations
- 4
- Primary Topic
- Gas Sensing Nanomaterials and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- Ministerio de Ciencia e Innovación
- Universidad de Granada
- Helmholtz-Zentrum Dresden-Rossendorf