Enhanced red-emitting phosphors through Si <sup>4+</sup> /Eu <sup>3+</sup> co-doping: advancing WLED performance and anti-counterfeiting applications

A novel Si 4+ doping strategy is proposed to optimise the luminescence properties of Eu 3+ -doped Sr 3 Ga 2 Ge 4 O 14 phosphors and further explore their potential applications in indoor lighting and anti-counterfeiting.

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Publication Details

Journal
Materials Chemistry Frontiers
Published
2025-01-01
DOI
https://doi.org/10.1039/d5qm00046g
Citations
6
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
3.11
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article

Enhanced red-emitting phosphors through Si 4+ /Eu 3+ co-doping: advancing WLED performance and anti-counterfeiting applications

Yaoqing Chu, Zhifu Liu, Lili Liu, Riwei Xu et al.
6 citations
Materials Chemistry Frontiers
Luminescence Properties of Advanced Materials
3.11
article

Enhanced red-emitting phosphors through Si 4+ /Eu 3+ co-doping: advancing WLED performance and anti-counterfeiting applications

Yaoqing Chu, Zhifu Liu, Lili Liu, Riwei Xu, Lianjiang Tan, Tian Tian, Xu Ding, Lanxuan Yang
article en
6 citations

Abstract

A novel Si 4+ doping strategy is proposed to optimise the luminescence properties of Eu 3+ -doped Sr 3 Ga 2 Ge 4 O 14 phosphors and further explore their potential applications in indoor lighting and anti-counterfeiting.

Materials Chemistry FrontiersVol. 9(10)
Shanghai Institute of Technology (CN)
Openalex Percentile: Top 9%
Luminescence Properties of Advanced Materials
3.11
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