Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide

Cadmium sulfide is a valuable material for solar cells, photovoltaic, and radiation detectors. It is thus important to evaluate the material damage mechanisms and damage threshold in response to irradiation. Here, we simulate the ultrafast XUV/X-ray irradiation of CdS with the combined model, XTANT-3. It accounts for nonequilibrium electronic and atomic dynamics, nonadiabatic coupling between the two systems, nonthermal melting and bond breaking due to electronic excitation. We find that the two phases of CdS, zinc blende and wurtzite, demonstrate very close damage threshold dose of ∼0.4-0.5 eV per atom. The damage is mainly thermal, whereas with increase of the dose, nonthermal effects begin to dominate leading to nonthermal melting. The transient disordered state is a high-density liquid, which may be semiconducting or metallic depending on the dose. Later recrystallization may recover the material back to the crystalline phase, or at high doses create an amorphous phase with variable bandgap. The revealed effects may potentially allow for controllable tuning of the band gap <i>via</i> laser irradiation of CdS.

Authors

Institutions

Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp00525f
Citations
1
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.73

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide

Nikita Medvedev, Aldo Artímez-Peña
1 citations
Physical Chemistry Chemical Physics
Advanced Semiconductor Detectors and Materials
0.73
article

Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide

Nikita Medvedev, Aldo Artímez-Peña
article en
1 citations

Abstract

Cadmium sulfide is a valuable material for solar cells, photovoltaic, and radiation detectors. It is thus important to evaluate the material damage mechanisms and damage threshold in response to irradiation. Here, we simulate the ultrafast XUV/X-ray irradiation of CdS with the combined model, XTANT-3. It accounts for nonequilibrium electronic and atomic dynamics, nonadiabatic coupling between the two systems, nonthermal melting and bond breaking due to electronic excitation. We find that the two phases of CdS, zinc blende and wurtzite, demonstrate very close damage threshold dose of ∼0.4-0.5 eV per atom. The damage is mainly thermal, whereas with increase of the dose, nonthermal effects begin to dominate leading to nonthermal melting. The transient disordered state is a high-density liquid, which may be semiconducting or metallic depending on the dose. Later recrystallization may recover the material back to the crystalline phase, or at high doses create an amorphous phase with variable bandgap. The revealed effects may potentially allow for controllable tuning of the band gap <i>via</i> laser irradiation of CdS.

Physical Chemistry Chemical PhysicsVol. 27(16)
Higher Institute of Technologies and Applied Sciences (CU), Czech Academy of Sciences (CZ), Czech Academy of Sciences, Institute of Plasma Physics (CZ), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
European Commission
Affordable and clean energy
Openalex Percentile: Top 30%
Advanced Semiconductor Detectors and Materials
0.73
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide — Nikita Medvedev, Aldo Artímez-Peña · Physical Chemistry Chemical Physics (2025) | TGRS Research Map | TGRS