Intrinsic point defect tolerance in selenium for indoor and tandem photovoltaics
Intrinsic point defects are found to be inactive for electron–hole recombination, while extrinsic impurities do not contribute significantly to doping, pointing to extended defects and interfaces as limiting factors in selenium solar cells.
Authors
- David O. Scanlon (ORCID: https://orcid.org/0000-0001-9174-8601)
- Rasmus Nielsen (ORCID: https://orcid.org/0000-0002-7600-9197)
- Aron Walsh (ORCID: https://orcid.org/0000-0001-5460-7033)
- Rasmus Schmidt Davidsen (ORCID: https://orcid.org/0000-0002-5782-9018)
- Seán R. Kavanagh (ORCID: https://orcid.org/0000-0003-4577-9647)
- Peter C. K. Vesborg (ORCID: https://orcid.org/0000-0002-3761-4212)
- J. Lundsgaard Hansen (ORCID: https://orcid.org/0000-0002-7751-2704)
- Ole Hansen (ORCID: https://orcid.org/0000-0002-6090-8323)
- Alp E. Samli (ORCID: https://orcid.org/0000-0002-3457-6556)
Institutions
- Ewha Womans University (KR)
- Aarhus University (DK)
- Harvard University Press (US)
- Aarhus University Hospital (DK)
- Thomas Young Centre (GB)
- University College London (GB)
- Swiss Federal Laboratories for Materials Science and Technology (CH)
- University of Birmingham (GB)
- Technical University of Denmark (DK)
Publication Details
- Journal
- Energy & Environmental Science
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4ee04647a
- Citations
- 17
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 12.42
Funders
- Harvard University
- UK Research and Innovation
- University of Warwick
- Center for the Environment, Harvard University
- Engineering and Physical Sciences Research Council