Toward Wide‐Angle III‐Nitride Miniaturized LEDs: Device Engineering and Photon Extraction Strategy

Abstract Miniaturized LEDs (mini‐LEDs) constitute a high‐quality light source in the backlight unit (BLU) of liquid crystal displays (LCDs). However, the Lambertian light field distribution of mini‐LEDs leads to limited viewing angles and decreased uniformity in BLU. Here, a high‐performance wide‐angle mini‐LED is demonstrated via device engineering and an innovative photon extraction strategy. By integrating distributed Bragg reflectors (DBRs) on the light emission surface of mini‐LED, propagation behaviors of photons are manipulated and thus altered Lambertian light field distribution into heart‐shaped light field distribution, realizing the construction of wide‐angle mini‐LED. Furthermore, the effects of the reflectivity of various DBRs on the light field distribution and optoelectronic characteristics of wide‐angle mini‐LEDs are systematically investigated. To boost the external quantum efficiency (EQE) of wide‐angle mini‐LEDs, a photon extraction strategy, including optimizing sapphire substrate thickness and employing multiple laser stealth scribing techniques is proposed. As a result, the optimal wide‐angle mini‐LED exhibits a peak light intensity angle of 38°, a full width at half maximum of angular light intensity distribution of 162° and a 21.3% increment in peak EQE, in comparison to the wide‐angle mini‐LED without utilizing photon extraction strategy. It believes these innovations provide a substantial advancement in developing wide‐angle mini‐LEDs, contributing to their application in LCDs.

Authors

Institutions

Publication Details

Journal
Laser & Photonics Review
Published
2025-03-29
DOI
https://doi.org/10.1002/lpor.202401723
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Toward Wide‐Angle III‐Nitride Miniaturized LEDs: Device Engineering and Photon Extraction Strategy

Siyuan Cui, Yuechang Sun, Shengjun Zhou, Jingjing Jiang et al.
3 citations
Laser & Photonics Review
GaN-based semiconductor devices and materials
3.77
article

Toward Wide‐Angle III‐Nitride Miniaturized LEDs: Device Engineering and Photon Extraction Strategy

Siyuan Cui, Yuechang Sun, Shengjun Zhou, Jingjing Jiang, Sheng Liu, Ziqi Zhang, Lang Shi
article en
3 citations

Abstract

Abstract Miniaturized LEDs (mini‐LEDs) constitute a high‐quality light source in the backlight unit (BLU) of liquid crystal displays (LCDs). However, the Lambertian light field distribution of mini‐LEDs leads to limited viewing angles and decreased uniformity in BLU. Here, a high‐performance wide‐angle mini‐LED is demonstrated via device engineering and an innovative photon extraction strategy. By integrating distributed Bragg reflectors (DBRs) on the light emission surface of mini‐LED, propagation behaviors of photons are manipulated and thus altered Lambertian light field distribution into heart‐shaped light field distribution, realizing the construction of wide‐angle mini‐LED. Furthermore, the effects of the reflectivity of various DBRs on the light field distribution and optoelectronic characteristics of wide‐angle mini‐LEDs are systematically investigated. To boost the external quantum efficiency (EQE) of wide‐angle mini‐LEDs, a photon extraction strategy, including optimizing sapphire substrate thickness and employing multiple laser stealth scribing techniques is proposed. As a result, the optimal wide‐angle mini‐LED exhibits a peak light intensity angle of 38°, a full width at half maximum of angular light intensity distribution of 162° and a 21.3% increment in peak EQE, in comparison to the wide‐angle mini‐LED without utilizing photon extraction strategy. It believes these innovations provide a substantial advancement in developing wide‐angle mini‐LEDs, contributing to their application in LCDs.

Laser & Photonics ReviewVol. 19(13)
Wuhan University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 8%
GaN-based semiconductor devices and materials
3.77
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.