Enhanced Optical Modulation in AZO-Based Engineered Hybrid Plasmonic Waveguide: High Extinction Ratio and Low Voltage Operation

In this study, we propose a high-extinction-ratio, low-voltage optical modulator with wide optical bandwidth operation in an engineered Hybrid Plasmonic Waveguide (HPW) utilizing Aluminum-doped Zinc Oxide (AZO). Incorporating a thin AZO layer into the HPW enables vertical and lateral plasmonic mode confinement. By inducing carrier changes electrically in AZO, we achieve the epsilon-near-zero (ENZ) state, facilitating efficient intensity and phase modulation across a wavelength range of 1500 nm to 1650nm. Optimized device geometry ensures proficient electro-optic coupling between the dielectric waveguide mode and the surface plasmon mode, resulting in lower losses compared to conventional HPWs. The extinction ratio (ER) ranges from 13 dB/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m to 45 dB/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m at a low voltage of 1 V, with modulation efficiency spanning from 2.75 V-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m to 2.90 V-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for wavelengths between 1500 nm and 1650 nm. We conduct a comparative analysis with another popular ENZ material, Indium Tin Oxide (ITO), demonstrating that the AZO-based modulator, with its high carrier mobility, outperforms the ITO-based modulator. AZO, as an ENZ material, holds transformative potential for optical modulation due to its unique electro-optical properties and compatibility with HPWs, offering significant advantages for high-speed, efficient, and compact optical modulators. Our proposed modulation scheme is poised to play a crucial role in advancing optical communication, quantum computing, and quantum sensing technologies.

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Publication Details

Journal
IEEE Journal of Quantum Electronics
Published
2025-03-31
DOI
https://doi.org/10.1109/jqe.2025.3556574
Citations
3
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
2.19

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article

Enhanced Optical Modulation in AZO-Based Engineered Hybrid Plasmonic Waveguide: High Extinction Ratio and Low Voltage Operation

Swati Rajput, Ajay Agarwal, T.K. Saha
3 citations
IEEE Journal of Quantum Electronics
Photonic and Optical Devices
2.19
article

Enhanced Optical Modulation in AZO-Based Engineered Hybrid Plasmonic Waveguide: High Extinction Ratio and Low Voltage Operation

Swati Rajput, Ajay Agarwal, T.K. Saha
article en
3 citations

Abstract

In this study, we propose a high-extinction-ratio, low-voltage optical modulator with wide optical bandwidth operation in an engineered Hybrid Plasmonic Waveguide (HPW) utilizing Aluminum-doped Zinc Oxide (AZO). Incorporating a thin AZO layer into the HPW enables vertical and lateral plasmonic mode confinement. By inducing carrier changes electrically in AZO, we achieve the epsilon-near-zero (ENZ) state, facilitating efficient intensity and phase modulation across a wavelength range of 1500 nm to 1650nm. Optimized device geometry ensures proficient electro-optic coupling between the dielectric waveguide mode and the surface plasmon mode, resulting in lower losses compared to conventional HPWs. The extinction ratio (ER) ranges from 13 dB/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m to 45 dB/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m at a low voltage of 1 V, with modulation efficiency spanning from 2.75 V-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m to 2.90 V-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for wavelengths between 1500 nm and 1650 nm. We conduct a comparative analysis with another popular ENZ material, Indium Tin Oxide (ITO), demonstrating that the AZO-based modulator, with its high carrier mobility, outperforms the ITO-based modulator. AZO, as an ENZ material, holds transformative potential for optical modulation due to its unique electro-optical properties and compatibility with HPWs, offering significant advantages for high-speed, efficient, and compact optical modulators. Our proposed modulation scheme is poised to play a crucial role in advancing optical communication, quantum computing, and quantum sensing technologies.

IEEE Journal of Quantum ElectronicsVol. 61(3)
Indian Institute of Technology Jodhpur (IN), Indian Institute of Technology Dhanbad (IN)
Department of Science and Technology, Ministry of Science and Technology, India
Openalex Percentile: Top 13%
Photonic and Optical Devices
2.19
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