Data-Writing and Shifting Processes Toward a Vertical Domain Wall Motion Memory
We demonstrate data writing and shifting processes in a double-free-layer nanopillar with perpendicular magnetic anisotropy (PMA). For the data writing process, the magnetization of the lower free layer is switched by injecting in-plane current pulses into the Pt bottom electrode to generate spin-orbit torque (SOT). The written information, i.e., the magnetization direction of the lower free layer, is subsequently transferred to the upper free layer through spin-transfer torque (STT) by injecting out-of-plane current pulses into the nanopillar. Furthermore, we verify that this write-and-shift memory operation can be achieved from different initial magnetization states.
Authors
- Ryusuke Hisatomi (ORCID: https://orcid.org/0000-0001-5420-2108)
- Yoichi Shiota (ORCID: https://orcid.org/0000-0003-1199-8438)
- Teruo Ono (ORCID: https://orcid.org/0000-0002-9629-0633)
- Heechan Jang
- S. Kasai (ORCID: https://orcid.org/0000-0001-7149-4800)
- Satoshi Sugimoto (ORCID: https://orcid.org/0000-0002-7148-2372)
- Hideki Narita (ORCID: https://orcid.org/0000-0002-0319-7318)
- F. Ye
- Shutaro Karube (ORCID: https://orcid.org/0000-0002-6718-4575)
Institutions
- National Institute for Materials Science (JP)
- Kyoto University (JP)
- Kyoto University Institute for Chemical Research
Publication Details
- Journal
- IEEE Transactions on Magnetics
- Published
- 2025-03-31
- DOI
- https://doi.org/10.1109/tmag.2025.3556016
- Primary Topic
- Parallel Computing and Optimization Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Science and Technology Agency