Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths

This study reports the ultraviolet (UV) light induced effects on the thin film transistor (TFT) based on the amorphous indium-gallium-tin-oxide (IGZO) material with the double gate structure. Under UV light exposure, the n-type TFT device with the relatively short channel (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4\mu $ </tex-math></inline-formula>m) can exhibit good response, compared to those with the relatively long channel according to the electrical measurements. In addition, continuous sweeping cycles up to 1000 cycles with and without UV light source suggest its robust endurance characteristics without obvious degradations. Then, constant dynamic light switching cycles up to 2000 cycles are tested and also verified with different light sources. To further examine the UV induced effects, various electrical operations and light intensities are carried out. The experimental results indicate that the device with a relatively short channel exhibits excellent UV light responsiveness and high reliability when exposed to a selective light source, demonstrating its potential for UV sensor or light-switching applications compared to conventional UV sensing devices.