Gas Sensor for Ammonia and Nitrogen Oxides Made of ALD-Grown MoS₂

Since the discovery of graphene, 2D materials are in the focus of research for new applications. With the advantages of light weight and flexibility, 2D materials, especially the famous group of transition metal dichalcogenides pave the way toward a new generation of sensing devices. A most practical fashion to realize such 2D material-based sensing devices is their implementation in transistor setups that allow photocurrent detection or chemically resistive sensing. Until now, gas sensing devices based on MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> are still in research but not used commercially. This work presents two versions of a process for fabricating sensor elements with MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films as a sensitive layer. The use of a low-temperature atomic layer deposition process as deposition technology for MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films allows the fabrication of sensor elements that can easily be integrated in industrial scale. Furthermore, the developed devices are investigated regarding their performance to NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and NH<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> at room temperature.