AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

Abstract In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 10 13 cm −2 presents a maximum electron velocity of 1.57 × 10 7 cm s −1 at 100 kV cm −1 , which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets.

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Publication Details

Journal
Applied Physics Express
Published
2025-03-31
DOI
https://doi.org/10.35848/1882-0786/adc77d
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

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1 citations
Applied Physics Express
GaN-based semiconductor devices and materials
1.26
article

AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

Yaozong Zhong, Xiaoning Zhan, Xin Chen, Qingru Wang, X.Y. Zhang, Xinlu Yang, Yu Zhou, Gaofei Zhi, Hui Yu Yang, Quan Li, Jianxun Liu, Quan Dai, Qian Sun
article en
1 citations

Abstract

Abstract In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 10 13 cm −2 presents a maximum electron velocity of 1.57 × 10 7 cm s −1 at 100 kV cm −1 , which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets.

Applied Physics ExpressVol. 18(4)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China, Science and Technology Program of Suzhou, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 23%
GaN-based semiconductor devices and materials
1.26
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