Application of Cumulative Exposure Model for the Step-Up Voltage Tests of MOSFET Devices

This article examines the Weibull Cumulative Exposure (CE) model and its application to voltage breakdown data of MOSFET devices in multi-step step-stress accelerated life tests. The model uses an inverse power law function to depict the lifetime dependency on the applied gate voltage needed for a MOSFET device to breakdown. Additionally, a mixture model is employed to distinguish between two failure modes: “intrinsic” and “extrinsic”. The results show that this approach allows for the characterization of two different types of MOSFET devices, namely planar and trench, and provides failure probabilities for different failure modes. This information is valuable for accurately evaluating the quality and reliability of MOSFET devices.