Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?

It has been well recognized that high-density deep states exist in indium-gallium-zinc oxide (IGZO) thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS), are understood to be related to these deep states. However, in this work, it was found that the deep-state density (<i>N</i><sub>tD</sub>) of atomic-layer-deposited (ALD) IGZO transistors can be an ultralow value (<2.3 × 10<sup>12</sup>/cm<sup>3</sup>) by the proposed NBIS-free light-assisted <i>I</i>-<i>V</i> measurements so that the deep states do not affect the <i>I</i>-<i>V</i> characteristics even in the subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in the deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.

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Publication Details

Journal
Nano Letters
Published
2025-03-31
DOI
https://doi.org/10.1021/acs.nanolett.5c01673
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?

Ying Wu, Zhiyu Lin, Yuyan Fan, S.-H. LI et al.
1 citations
Nano Letters
Thin-Film Transistor Technologies
0.73
article

Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?

Ying Wu, Zhiyu Lin, Yuyan Fan, S.-H. LI, Mengwei Si, Yulong Dong, Jeffrey Xu, Wanpeng Zhao, Liankai Zheng, Xiuyan Li, Ziheng Wang, Lijuan Xing
article en
1 citations

Abstract

It has been well recognized that high-density deep states exist in indium-gallium-zinc oxide (IGZO) thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS), are understood to be related to these deep states. However, in this work, it was found that the deep-state density (<i>N</i><sub>tD</sub>) of atomic-layer-deposited (ALD) IGZO transistors can be an ultralow value (<2.3 × 10<sup>12</sup>/cm<sup>3</sup>) by the proposed NBIS-free light-assisted <i>I</i>-<i>V</i> measurements so that the deep states do not affect the <i>I</i>-<i>V</i> characteristics even in the subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in the deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.

Nano LettersVol. 25(14)
Shanghai Jiao Tong University (CN), Huawei Technologies (China) (CN), Huawei Technologies (United Kingdom) (GB)
National Natural Science Foundation of China
Openalex Percentile: Top 30%
Thin-Film Transistor Technologies
0.73
DOISourceOpenAlex
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Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film? — Ying Wu, Zhiyu Lin, et al. · Nano Letters (2025) | TGRS Research Map | TGRS