Giant Bandgap Reduction of Co<sub>3</sub>TeO<sub>6</sub> via Pressure Engineering
Double perovskites represent a class of materials with promising fundamental properties and a broad spectrum of potential applications. However, the wide bandgap energy in double perovskites presents a hindrance to further enhancement of their photovoltaic efficiency. In the present study, a high-pressure technique is employed to tune the bandgap energy of double perovskite Co<sub>3</sub>TeO<sub>6</sub> (CTO). A giant bandgap reduction of ∼37% from 2.93 to 1.85 eV has been observed after high-pressure treatment. Subsequent synchrotron-based X-ray diffraction and Raman spectroscopy results reveal that the significant bandgap reduction of CTO accompanies a sequence of structural phase transitions during compression and decompression. Furthermore, the high-pressure phase with a smaller bandgap energy of 1.85 eV turns out to be quenchable to ambient conditions, making the quenched CTO a promising light-harvesting material for photovoltaic applications. The present results demonstrate that high pressure can represent a green and efficient technique to tune the properties of multifunctional materials and serve as a guide for searching for stable and environmentally friendly light-harvesting materials.
Authors
- Hao Wang (ORCID: https://orcid.org/0000-0002-0733-608X)
- Zengming Zhang (ORCID: https://orcid.org/0000-0001-8245-9955)
- Hua-Yun Geng (ORCID: https://orcid.org/0000-0001-5757-3027)
- Matthias Weil (ORCID: https://orcid.org/0000-0001-5235-9910)
- Peter Lazor (ORCID: https://orcid.org/0000-0001-9992-8009)
- R. Mathieu (ORCID: https://orcid.org/0000-0002-5261-2047)
- Yonggang Wang (ORCID: https://orcid.org/0000-0003-4816-9182)
- Ke Liu (ORCID: https://orcid.org/0000-0002-3614-8133)
- Ying Chen (ORCID: https://orcid.org/0000-0002-7322-2224)
- Xiangdong Li (ORCID: https://orcid.org/0000-0003-2261-2393)
- Lei Liu (ORCID: https://orcid.org/0000-0002-7749-0402)
- С. А. Иванов (ORCID: https://orcid.org/0000-0003-2329-2571)
- Q. Su
Institutions
- Uppsala University (SE)
- University of Science and Technology of China (CN)
- TU Wien (AT)
- Lomonosov Moscow State University (RU)
- Peking University (CN)
- Center for High Pressure Science and Technology Advanced Research (CN)
- Institute of Fluid Physics
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2025-03-31
- DOI
- https://doi.org/10.1021/acs.jpclett.5c00492
- Citations
- 2
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Russian Science Foundation
- Uppsala Universitet