Switchable Bulk Acoustic Resonator Based on AlN/Al <sub>0.7</sub> Sc <sub>0.3</sub> N Films
ABSTRACT Tuneable filters are essential for the development of the reconfigurable RF modules. This work demonstrates a switchable bulk acoustic wave resonator utilizing a double‐layer structure of piezoelectric AlN and ferroelectric Al 0.7 Sc 0.3 N films. By applying a DC bias, the resonator achieves frequency switching through the control of the polarization in the Al 0.7 Sc 0.3 N layer. The resonator exhibits dual‐mode operation, with tuneable resonant frequencies between 6.80 and 16.73 GHz, while maintaining considerable electromechanical coupling efficiency at high frequencies. These characteristics reveal great potential of this device for the development of reconfigurable acoustic filters and RF modules in advanced wireless communication systems.
Authors
- Xuanqi Huang (ORCID: https://orcid.org/0000-0002-7085-4162)
- Weimin Li (ORCID: https://orcid.org/0000-0002-9117-1213)
- Zhiqiang Mu (ORCID: https://orcid.org/0000-0002-3406-8957)
- Wenjie Yu
- Chongyang Huo
- Jinghong Lu
Institutions
- Shanghai University (CN)
- Chinese Academy of Sciences (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- Shanghai Research Institute of Materials (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Electronics Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1049/ell2.70241
- Citations
- 3
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.02
Funders
- National Science Foundation
- National Natural Science Foundation of China
- Shanghai Technology Innovation Project
- National Key Research and Development Program of China