The Effect of He on the Evolution of Radiation-Induced Dislocation Loops near W/Cu Interface

In the current work, the distribution behaviors of irradiation-induced dislocation loops near the W-Cu interface (contains a thin W2C transition layer) under self-interstitial atom diffusion-dominated conditions were investigated based on the comparative experiment of 3 MeV Fe ion and 100 keV He ion irradiation. The size distribution and number density of radiation-induced dislocation loops in both sides of the interface were characterized using Transmission Electron Microscopy with different two-beam conditions. The impact of the phase boundary on the dislocation loop distribution and the influence of He on this mechanism was discussed. The results showed that the phase boundary (PB) has a significant effect on the distribution of radiation-induced dislocation loops. In the Fe-irradiated sample, the proportion of b = 1/2<111> type dislocation loops near the phase boundary on the W side increases significantly, and b = 1/2<110> type dislocation loops dominate on the Cu side. He will significantly affect the loop distribution near the W/Cu phase boundary due to the strong binding of He with vacancies in W, which suppresses the recombination of SIA and vacancies and promotes the formation and growth of interstitial-type dislocations.