In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy
Abstract The in-plane optical anisotropy (IPOA) of c -plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS 2 /Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS 2 /Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.
Authors
- Jinling Yu (ORCID: https://orcid.org/0000-0003-0108-136X)
- Zhu Diao (ORCID: https://orcid.org/0000-0002-4049-5672)
- Zhaonan Li (ORCID: https://orcid.org/0000-0002-0757-6905)
- Tingting Wei
- Shuying Cheng (ORCID: https://orcid.org/0000-0001-5544-9794)
- Yonghai Chen (ORCID: https://orcid.org/0000-0001-9347-7024)
- Yunfeng Lai
- Chao Zhao (ORCID: https://orcid.org/0009-0004-8887-7778)
Publication Details
- Journal
- Chinese Physics B
- Published
- 2025-03-31
- DOI
- https://doi.org/10.1088/1674-1056/adc6f4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00