The Impact of Novel Semiconductor Manufacturing Processes on Field Effect Transistor Characteristics

Field Effect Transistors (FETs) are at the core of modern semiconductor technology, and the miniaturization of their size has posed challenges such as short-channel effects for traditional manufacturing processes. This paper reviews the principles of three novel semiconductor fabrication techniques: Atomic Layer Deposition (ALD), Metal-Organic Chemical Vapor Deposition (MOCVD), and Pulsed Laser Deposition (PLD). It analyzes their role in optimizing FET characteristics and provides directions for overcoming the bottlenecks of traditional processes, which will aid in advancing semiconductor technology.