An Investigation of Thermal Reliability Issues and Solution Strategies for GaN-HEMT Power Devices

This paper discusses the thermal reliability design of high electron mobility transistor (HEMT) power in gallium nitride (GaN) devices in depth. GaN HEMTs' exceptional performance in high-frequency, high-voltage, and high-power applications has garnered a lot of interest. However, a major element limiting long-term stability is now their problems with thermal reliability. This paper provides a detailed analysis of the thermal challenges faced by GaN-HEMT power devices, including the self-heating effect, uneven heat distribution, thermal stress, and thermal resistance, and discusses corresponding solutions. By optimizing device structure, improving packaging technology, and enhancing thermal management measures, the thermal problems of GaN-HEMT power devices can be effectively addressed, thereby improving their thermal reliability and electrical performance. These approaches not only improve the long-term stability of the devices but also expand their potential for high-frequency, high-voltage, and high-power applications. Future research should continue focusing on innovating thermal management techniques and improving reliability models to promote the development and application of GaN-HEMT technology.