Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

Abstract In this study, the physical and structural properties of Mn₄Si₇ silicide crystals synthesized using Hot Isostatic Pressing (HIP) and Spark Plasma Sintering (SPS) methods were analyzed using X-ray diffraction (XRD) techniques. In the samples obtained by the HIP method, 11 diffraction peaks were identified, with crystal sizes ranging from 8.8∙10⁻⁹ m to 3.6∙10⁻⁸ m, and the lattice strain index varied from 0.01 to 0.41. These results reflect the microstructural characteristics and the deformation of the crystals, providing insight into how these structural features influence the mechanical, thermal, and electronic properties of the material. In the SPS method samples, 13 diffraction peaks were observed, with crystal sizes ranging from 3.8∙10⁻⁹ m to 3.6∙10⁻⁸ m, and lattice strain varied from 0.002 to 0.19, indicating that the crystals maintain structural equilibrium and geometric integrity. The dislocation density, measured in the HIP samples (ranging from 3.5∙10 1 ⁰ to 3.2∙10 12 ) and SPS samples (ranging from 7.4∙10 11 to 7.9∙10 14 ), plays a crucial role in determining the crystals' plasticity and mechanical strength. The degree of crystallinity was found to be 6.4% for the HIP method and 7% for the SPS method, reflecting the structural purity and perfection of the crystals. IR transmission spectra revealed structural changes in the crystals, demonstrating their direct influence on the material's electronic and optical properties. These analyses provide valuable insights into enhancing the thermoelectric properties and mechanical stability of materials, as well as improving the performance of technological devices under high-temperature and high-pressure conditions. This study lays the foundation for future research aimed at optimizing material properties for advanced technological applications.

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Publication Details

Journal
Journal of Materials Science Materials in Engineering
Published
2025-03-31
DOI
https://doi.org/10.1186/s40712-025-00265-0
Citations
4
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
4.99
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article

Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

Y. I. Alıyev, S. H. Jabarov, Akmal Kosimov, Gunel Imanova et al.
4 citations
Journal of Materials Science Materials in Engineering
Semiconductor materials and interfaces
4.99
article

Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

Y. I. Alıyev, S. H. Jabarov, Akmal Kosimov, Gunel Imanova, Burkhon Donaev, A.I. Kamardin, Б.Д. Игамов, D.Kh. Nabiev, I. R. Bekpulatov, A.M. Normamatov
article en
4 citations

Abstract

Abstract In this study, the physical and structural properties of Mn₄Si₇ silicide crystals synthesized using Hot Isostatic Pressing (HIP) and Spark Plasma Sintering (SPS) methods were analyzed using X-ray diffraction (XRD) techniques. In the samples obtained by the HIP method, 11 diffraction peaks were identified, with crystal sizes ranging from 8.8∙10⁻⁹ m to 3.6∙10⁻⁸ m, and the lattice strain index varied from 0.01 to 0.41. These results reflect the microstructural characteristics and the deformation of the crystals, providing insight into how these structural features influence the mechanical, thermal, and electronic properties of the material. In the SPS method samples, 13 diffraction peaks were observed, with crystal sizes ranging from 3.8∙10⁻⁹ m to 3.6∙10⁻⁸ m, and lattice strain varied from 0.002 to 0.19, indicating that the crystals maintain structural equilibrium and geometric integrity. The dislocation density, measured in the HIP samples (ranging from 3.5∙10 1 ⁰ to 3.2∙10 12 ) and SPS samples (ranging from 7.4∙10 11 to 7.9∙10 14 ), plays a crucial role in determining the crystals' plasticity and mechanical strength. The degree of crystallinity was found to be 6.4% for the HIP method and 7% for the SPS method, reflecting the structural purity and perfection of the crystals. IR transmission spectra revealed structural changes in the crystals, demonstrating their direct influence on the material's electronic and optical properties. These analyses provide valuable insights into enhancing the thermoelectric properties and mechanical stability of materials, as well as improving the performance of technological devices under high-temperature and high-pressure conditions. This study lays the foundation for future research aimed at optimizing material properties for advanced technological applications.

Journal of Materials Science Materials in EngineeringVol. 20(1)
Khazar University (AZ), Western Caspian University (AZ), Azerbaijan State University of Economics (AZ), Interstate Commission for Water Coordination of Central Asia (UZ), Azerbaijan Scientific-Research & Design-Prospecting Power Engineering Institute (AZ), Institute of Physics (AZ), Ministry of Science and Education Republic of Azerbaijan (AZ), Karshi State University (UZ), Azerbaijan State Pedagogical University (AZ), Termez State University (UZ), Tashkent Pediatric Medical Institute (UZ)
Openalex Percentile: Top 5%
Semiconductor materials and interfaces
4.99
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