Effect of SiNx/SiO2 Passivation Layers on Diffused Front Surface Field in n-type Silicon Wafers

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

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Publication Details

Journal
Journal of Nano- and Electronic Physics
Published
2025-01-01
DOI
https://doi.org/10.21272/jnep.17(1).01002
Primary Topic
Silicon and Solar Cell Technologies
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article
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article

Effect of SiNx/SiO2 Passivation Layers on Diffused Front Surface Field in n-type Silicon Wafers

A. Boucheham, A. Djelloul, B. Labdelli, L. Benharrat et al.
Journal of Nano- and Electronic Physics
Silicon and Solar Cell Technologies
article

Effect of SiNx/SiO2 Passivation Layers on Diffused Front Surface Field in n-type Silicon Wafers

A. Boucheham, A. Djelloul, B. Labdelli, L. Benharrat, Salim Lamri, N. Chahinez, M. Alloun
article en

Abstract

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Journal of Nano- and Electronic PhysicsVol. 17(1)
Openalex Percentile: Top 95%
Silicon and Solar Cell Technologies
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Effect of SiNx/SiO2 Passivation Layers on Diffused Front Surface Field in n-type Silicon Wafers — A. Boucheham, A. Djelloul, et al. · Journal of Nano- and Electronic Physics (2025) | TGRS Research Map | TGRS