Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy
Monolithically integrated lasers on silicon photonics enable scalable, foundry-compatible production for data communications applications. However, material mismatches in heteroepitaxial systems and high coupling losses pose challenges for III-V integration on silicon. We combine three techniques: recessed silicon pockets for III-V growth, two-step heteroepitaxy using both MOCVD and MBE, and a polymer facet gap-fill approach to develop O-band InAs quantum dot lasers monolithically integrated on silicon photonics chiplets. Lasers coupled to silicon ring resonators and silicon nitride distributed Bragg reflectors (DBR) demonstrate single-mode lasing with side-mode suppression ratio up to 32 dB. Devices lase at temperatures up to 105 °C with an extrapolated operational lifetime of 6.2 years at 35 °C.
Authors
- Chen Shang (ORCID: https://orcid.org/0000-0002-2577-9220)
- Rosalyn Koscica (ORCID: https://orcid.org/0000-0002-5485-9692)
- Bei Shi (ORCID: https://orcid.org/0000-0003-3453-2358)
- Michael Zylstra
- D.L. Harame (ORCID: https://orcid.org/0000-0002-4590-8114)
- Alec M. Skipper (ORCID: https://orcid.org/0000-0002-5904-7941)
- Jonathan Klamkin (ORCID: https://orcid.org/0000-0001-9911-6879)
- Kaiyin Feng (ORCID: https://orcid.org/0000-0002-2356-7777)
- A. Prabakaran
- Joshua Herman (ORCID: https://orcid.org/0000-0002-7411-1147)
- John E. Bowers (ORCID: https://orcid.org/0000-0003-4270-8296)
- Gerald Leake
- Andrew Netherton
Institutions
- University of California, Santa Barbara (US)
- AIM Photonics (United States) (US)
- Analog Photonics (United States) (US)
- SUNY Polytechnic Institute (US)
Publication Details
- Journal
- Journal of Lightwave Technology
- Published
- 2025-03-29
- DOI
- https://doi.org/10.1109/jlt.2025.3555555
- Citations
- 5
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.65