Switching Energy Losses Characterization of Discrete SiC Power Transistors—A New Thermal Approach

This article presents a new method for measuring the switching energies of discrete silicon carbide (SiC) power transistors based on an increase in junction temperature caused by the self-heating effect. The proposed method is introduced with a description of the necessary measurement setup. Experimental results for discrete SiC cascode are compared with those obtained using the standard oscilloscope method based on fast voltage and current measurements. Then, the limitations of the oscilloscope method are discussed. Moreover, factors influencing the accuracy of the proposed method are identified and discussed.