24 GHz GaN HEMT Power Amplifier Utilizing Matching Circuit-Less Design Methodology

A 24 GHz GaN HEMT power amplifier (PA) suitable for Wireless power transmission (WPT) applications with a power added efficiency of 40% has been demonstrated using a standard foundry process with a gate length of 0.15 µm. A matching circuit-less design approach was applied to the design of this power amplifier. This design method has previously been used to achieve amplifiers with good performance at 2.4 GHz and 5.8 GHz. In this study, we applied this technique to the 24 GHz band and confirmed its usefulness.

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Publication Details

Published
2025-02-10
DOI
https://doi.org/10.1109/ams63679.2025.10937825
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

24 GHz GaN HEMT Power Amplifier Utilizing Matching Circuit-Less Design Methodology

Shinji Hara, Noriyuki Tanba
GaN-based semiconductor devices and materials
article

24 GHz GaN HEMT Power Amplifier Utilizing Matching Circuit-Less Design Methodology

Shinji Hara, Noriyuki Tanba
article en

Abstract

A 24 GHz GaN HEMT power amplifier (PA) suitable for Wireless power transmission (WPT) applications with a power added efficiency of 40% has been demonstrated using a standard foundry process with a gate length of 0.15 µm. A matching circuit-less design approach was applied to the design of this power amplifier. This design method has previously been used to achieve amplifiers with good performance at 2.4 GHz and 5.8 GHz. In this study, we applied this technique to the 24 GHz band and confirmed its usefulness.

Nagoya University (JP)
Affordable and clean energy
Openalex Percentile: Top 96%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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24 GHz GaN HEMT Power Amplifier Utilizing Matching Circuit-Less Design Methodology — Shinji Hara, Noriyuki Tanba · (2025) | TGRS Research Map | TGRS