E-Band Amplifier in Commercial 0.12 µm GaN at Beyond Twice f<sub>T</sub>
A three-stage E-band amplifier has been designed in a commercial GaN process with an f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of only 35 GHz, less than half the amplifier’s target frequency band of 81-86 GHz. Two FET topologies were investigated: standard outside via (OSV) and a butterfly (BF) layout with double backvias. Measured gain exceeded 12 dB for both topologies and output power exceeded 18 dBm at 2 dB compression.
Authors
- Melissa C. Gorman (ORCID: https://orcid.org/0009-0000-3921-3976)
- Simon J. Mahon (ORCID: https://orcid.org/0000-0001-9064-5547)
- Mohamed N. Ahmed
- Andrew Jones (ORCID: https://orcid.org/0000-0001-5951-889X)
Institutions
- Macquarie University (AU)
Publication Details
- Published
- 2025-02-10
- DOI
- https://doi.org/10.1109/ams63679.2025.10937869
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00