V-band GaAs Power Amplifier Cell
The development of a compact, 0.1 um GaAs, V-band, power-amplifier cell is reported. The cell is a building block suitable for stacking in order to implement amplifiers with higher power. The cell delivers 23.0 dBm in saturation at 60 GHz with a PAE of 19%. The 3-dB bandwidth is 10 GHz with a peak small-signal gain of 24.8 dB. For the design, a single-finger pHEMT model and foundry model were used and compared.
Authors
- Syed Muzahir Abbas (ORCID: https://orcid.org/0000-0002-6390-0896)
- Melissa C. Gorman (ORCID: https://orcid.org/0009-0000-3921-3976)
- J. Anthony Parker (ORCID: https://orcid.org/0009-0005-4029-7739)
- Simon J. Mahon (ORCID: https://orcid.org/0000-0001-9064-5547)
- Andrew Jones (ORCID: https://orcid.org/0000-0001-5951-889X)
Institutions
- Macquarie University (AU)
Publication Details
- Published
- 2025-02-10
- DOI
- https://doi.org/10.1109/ams63679.2025.10937814
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00