Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

Realization of a suitable energy band structure of core–shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn1–xCdxSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn1–xCdxSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2025-03-28
DOI
https://doi.org/10.1021/acs.jpcc.5c01061
Citations
8
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
4.14

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article

Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

Andrey L. Rogach, Jianguo Tang, Zhonglin Du, Aleksandr A. Sergeev et al.
8 citations
The Journal of Physical Chemistry C
Quantum Dots Synthesis And Properties
4.14
article

Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

Andrey L. Rogach, Jianguo Tang, Zhonglin Du, Aleksandr A. Sergeev, Yixiao Huang, Jiahua Kong, Zhannan Peng, Ruiling Zhang, Zhenhua Sun, Qinggang Hou
article en
8 citations

Abstract

Realization of a suitable energy band structure of core–shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn1–xCdxSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn1–xCdxSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges.

The Journal of Physical Chemistry CVol. 129(14)
Qingdao University (CN), Harbin Engineering University (CN), Shandong University (CN), City University of Hong Kong (HK), Shenzhen University (CN), Hong Kong University of Science and Technology (HK), Institut des Sciences Moléculaires (FR), China National Hybrid Rice R&D Central Hunan Hybrid Rice Reserch Center (CN), Qingdao Center of Resource Chemistry and New Materials (CN), University of Hong Kong (HK)
Natural Science Foundation of Shenzhen City, National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, China Postdoctoral Science Foundation
Affordable and clean energy
Openalex Percentile: Top 6%
Quantum Dots Synthesis And Properties
4.14
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