Stabilizing Surface Lattice O<i><sup>n</sup></i><sup>−</sup> (0 < <i>n</i> < 2) for Long‐Term Durability of LiCoO<sub>2</sub>
Abstract The instability of surface lattice O n − (0 < n < 2) in charged LiCoO₂ (LCO) limits its long‐term cycling stability beyond 4.55 V versus Li/Li⁺. Herein, the spinel and rock‐salt (RS) phases are constructed on LCO surface to stabilize lattice O n − , namely S‐LCO and R‐LCO, respectively. Upon long‐term cycling at 4.6 V, the loss of lattice O n − leads to a progressive deterioration of surface spinel phase, which ultimately transforms into a strong Li + ‐blocking phase. In contrast, for R‐LCO, the surface lattice O n − in the RS phase remains stable in long‐term cycles. Theoretical calculations reveal that the migration barriers of lattice O n − are significantly higher in the RS phase than in the spinel phase. Due to the stabilized surface lattice O n − , the R‐LCO||Li cell shows an impressive capacity retention of 78.6% after 1000 cycles at 4.6 V (at 1C rate) and superior floating charge durability at 45 °C. This study highlights the importance of surface structure tailoring in developing advanced LCO cathodes.
Authors
- Hai Lin (ORCID: https://orcid.org/0000-0001-9308-6461)
- Bin Fei (ORCID: https://orcid.org/0000-0002-4274-1873)
- Shunning Li (ORCID: https://orcid.org/0000-0002-5381-6025)
- Xingxing Yin
- Hengyu Ren
- Feng Pan (ORCID: https://orcid.org/0000-0002-1362-4336)
- Guojie Chen (ORCID: https://orcid.org/0000-0002-5909-6583)
- Qinghe Zhao (ORCID: https://orcid.org/0000-0002-8580-0634)
- Wangyang Ding (ORCID: https://orcid.org/0009-0001-8238-9843)
- Zijian Li (ORCID: https://orcid.org/0000-0002-8212-5282)
- Mingyang Li (ORCID: https://orcid.org/0000-0003-4421-8725)
- Dong Zhou (ORCID: https://orcid.org/0000-0003-4467-1087)
- Wenguang Zhao (ORCID: https://orcid.org/0000-0003-0563-6561)
- Xiaohu Wang (ORCID: https://orcid.org/0000-0001-9062-5415)
- Lin Zhou (ORCID: https://orcid.org/0000-0002-8405-5310)
- Shiming Chen (ORCID: https://orcid.org/0000-0003-0656-7342)
- Haocong Yi
- Jun Wang (ORCID: https://orcid.org/0009-0004-3908-0746)
Institutions
- King University (US)
- Hong Kong Polytechnic University (HK)
- Sun Yat-sen University (CN)
- Shenzhen University (CN)
- Peking University (CN)
- Southern University of Science and Technology (CN)
- University of Malaya (MY)
- Advanced Energy (United States) (US)
- Peking University Shenzhen Hospital (CN)
Publication Details
- Journal
- Angewandte Chemie
- Published
- 2025-03-28
- DOI
- https://doi.org/10.1002/ange.202503100
- Citations
- 7
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 5.11