X-band RF CMOS SPDT Switch IC based on 90 nm CMOS Technology
This paper contains simulating and experimental results for X-band RF SPDT switch IC fabricated on 90 nm CMOS technology. It was pointed, that measured compression power value more than 10.5 dB at the 10.0 GHz. Floating body technique allows to get insertion loss value less than 1.17 dB at the X-band.
Authors
- Evgeny Kotlyarov (ORCID: https://orcid.org/0009-0005-9712-3115)
- Denis Rodionov (ORCID: https://orcid.org/0000-0001-7322-0731)
- А.I. Khlybov
- В.В. Лосев
- U.A. Chaplygin
Publication Details
- Journal
- Nano- i Mikrosistemnaya Tehnika
- Published
- 2024-12-20
- DOI
- https://doi.org/10.17587/nmst.26.297-306
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00