Study on the Mechanism of Electrochemical Mechanical Polishing Mechanism of Single-Crystal 4H-SiC Based on Friction and Wear

Abstract Electrochemical mechanical polishing (ECMP) technology can effectively enhance the material removal rate and surface quality of single-crystal silicon carbide (SiC). However, the material removal mechanism of ECMP on SiC has not been thoroughly studied. This research employs a ball-on-disk friction and wear method to evaluate the effects of different electrolyte solutions (strong acid, strong base, and neutral electrolyte) and electrolyte concentrations on the electrochemical anodic oxidation reaction of single-crystal silicon carbide. Additionally, a pin-on-disk friction and wear simulation of ECMP is used to investigate the impact of different abrasive types, particle sizes, loads, and voltages on the material removal characteristics of silicon carbide wafer surfaces during ECMP. The results indicate that, under the influence of an electric field, the NaCl solution exhibits better electrolyte performance than strong acid and strong base solutions, and the anodic oxidation occurring on the SiC surface intensifies with the increasing electrolyte concentration. Furthermore, the pin-on-disk friction and wear experiments demonstrate that reasonable control of process parameters can effectively improve the removal efficiency and the surface quality of electrochemical mechanical polishing. These findings provide valuable theoretical guidance for the electrochemical mechanical polishing of SiC.