Structural Elucidation and Electrical Characterization of Molecular Beam Epitaxy-Grown Nanostructures

Molecular Beam Epitaxy (MBE) is a sophisticated method for producing superior nanostructures with regulated form and composition. With an emphasis on their crystallographic characteristics, surface morphology, and electronic behaviour, this work provides the structural clarification and electrical characterisation of MBE-grown nanostructures. The distribution of defects, lattice strain, and structural integrity of the nanostructures are revealed by transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HRXRD). Surface topology and roughness are revealed using atomic force microscopy (AFM). Electrical characterisation shows how growth factors affect conductivity, charge trapping, and carrier transport by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Optimised growing conditions improve electrical performance, decrease flaws, and increase crystallinity, according to the results. In order to support their possible uses in nanoelectronics, optoelectronics, and quantum devices, the work offers a thorough knowledge of the structure-property connection in MBE-grown nanostructures.