Femtosecond laser writing of silicon vacancy color centers with specific defect orientations in silicon carbide
High yield and precise spatial controllability of silicon vacancies can be achieved using femtosecond laser processing. Selective fabrication of V2 color centers is attainable under specific parameter conditions.
Authors
- Tian Cheng-rui
- Qingbo Li (ORCID: https://orcid.org/0000-0001-6174-8512)
- Xian Zhao (ORCID: https://orcid.org/0000-0002-1523-4534)
- Junlei Wang (ORCID: https://orcid.org/0000-0003-4453-0946)
- xiaoqing liu
- Yan Li (ORCID: https://orcid.org/0000-0003-0607-3166)
- Yan Liu (ORCID: https://orcid.org/0000-0002-2282-4954)
- Runsheng Zheng
Institutions
- Shandong University (CN)
- Ministry of Education (ME)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00336a
- Citations
- 1
- Primary Topic
- Laser Material Processing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 1.33