Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET

Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and simulation. This study verified the strong influence of width and doping concentration of the JFET region of a SiC MOSFET on the sensitivity to heavy-ion-induced gate damage, including LGD and SELC related to gate damage. Failure analysis was conducted to confirm the damage in the gate oxide. Heavy-ion transient technology computer aided design (TCAD) simulations were carried out to confirm the impact of maximum gate oxide electric field during irradiation on gate damage and type of single-event effects (SEEs). This study also provides a feasible way to harden SiC MOSFETs in a radiation environment by reducing the maximum gate oxide electrical field during exposure to heavy ions.