Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits
Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe<sub>2</sub> and CuInP<sub>2</sub>S<sub>6</sub> (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
Authors
- Zijing Zhao (ORCID: https://orcid.org/0000-0001-8618-7002)
- Junzhe Kang (ORCID: https://orcid.org/0000-0003-4322-0858)
- Shaloo Rakheja (ORCID: https://orcid.org/0000-0001-7501-275X)
- Takashi Taniguchi (ORCID: https://orcid.org/0000-0002-1467-3105)
- Kenji Watanabe (ORCID: https://orcid.org/0000-0003-3701-8119)
- Wenjuan Zhu (ORCID: https://orcid.org/0000-0003-2824-1386)
- Hojoon Ryu (ORCID: https://orcid.org/0000-0002-8910-6498)
- Hanwool Lee (ORCID: https://orcid.org/0000-0002-8990-6022)
- Ashwin Tunga (ORCID: https://orcid.org/0000-0002-4955-6910)
- Lin Ye (ORCID: https://orcid.org/0000-0003-0062-6436)
- Xiaotong Xu (ORCID: https://orcid.org/0009-0005-0393-3863)
- Chia‐Hsun Tsai
Institutions
- University of Illinois Urbana-Champaign (US)
- National Institute for Materials Science (JP)
Publication Details
- Journal
- ACS Nano
- Published
- 2025-03-27
- DOI
- https://doi.org/10.1021/acsnano.4c16862
- Citations
- 8
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 5.84
Funders
- University of Illinois at Urbana-Champaign
- Division of Engineering Education and Centers