Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe<sub>2</sub> and CuInP<sub>2</sub>S<sub>6</sub> (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.

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Publication Details

Journal
ACS Nano
Published
2025-03-27
DOI
https://doi.org/10.1021/acsnano.4c16862
Citations
8
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
5.84

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article

Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

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8 citations
ACS Nano
Advanced Memory and Neural Computing
5.84
article

Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

Zijing Zhao, Junzhe Kang, Shaloo Rakheja, Takashi Taniguchi, Kenji Watanabe, Wenjuan Zhu, Hojoon Ryu, Hanwool Lee, Ashwin Tunga, Lin Ye, Xiaotong Xu, Chia‐Hsun Tsai
article en
8 citations

Abstract

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe<sub>2</sub> and CuInP<sub>2</sub>S<sub>6</sub> (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.

ACS NanoVol. 19(13)
University of Illinois Urbana-Champaign (US), National Institute for Materials Science (JP)
University of Illinois at Urbana-Champaign, Division of Engineering Education and Centers
Affordable and clean energy
Openalex Percentile: Top 4%
Advanced Memory and Neural Computing
5.84
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