Simulation study on the performance of wide band gap quaternary compound Cu<sub>2</sub>BaSnS<sub>4</sub> for indoor solar cells in IoT applications

Abstract Indoor photovoltaic (IPV) cells are designed to operate under low-intensity artificial light sources. Generally, artificial light sources have a narrow spectrum, which can be efficiently captured by a wide band gap absorber. However, existing wide band gap absorbers, such as amorphous silicon (a-Si), perovskite (MAPbX 3 ), suffer from toxicity and stability issues, making it essential to explore an alternative that is an earth-abundant, environmentally friendly. In this study, we used Vienna ab initio Simulation Package (VASP)-based ab-initio calculations to investigate Cu 2 BaSnS 4 (CBTS) materials, focusing on their crystal structure, optoelectronic properties, and performed SCAPS-based simulations for performance estimation. CBTS exhibits a direct band gap ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of ∼1.9 eV and high absorption coefficient ( α ∼ 10 5 cm −1 ) in the UV-visible spectrum, making it ideal for IPV applications. Detailed balance calculations predict remarkable solar cell efficiencies of 59.96% ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> = 1.9 eV) and 57.51% ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> = 1.95 eV) under indoor light emitting diode (LED) and compact fluorescent light (CFL) lighting. The simulated efficiency exceeding 50% are attributed to the narrow emission spectrum of indoor light sources, which is efficiently absorbed by wide band gap CBTS. Key factors influencing efficiency include high shunt resistance (R Sh &gt; 10 6 Ω cm 2 ) and minimal impact of series resistance up to 100 Ω cm 2 . A key distinction between IPV and outdoor photovoltaics is the lower photo-generated carrier concentration in low-light conditions, leading to a higher ratio of trapped to photo-generated carriers. These findings highlight CBTS’s potential for next-generation indoor energy solutions.

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Publication Details

Journal
Physica Scripta
Published
2025-03-27
DOI
https://doi.org/10.1088/1402-4896/adc63e
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

Simulation study on the performance of wide band gap quaternary compound Cu2BaSnS4 for indoor solar cells in IoT applications

Mukaddar Sk, Atul Kumar, M. T. Islam
3 citations
Physica Scripta
Chalcogenide Semiconductor Thin Films
2.19
article

Simulation study on the performance of wide band gap quaternary compound Cu2BaSnS4 for indoor solar cells in IoT applications

Mukaddar Sk, Atul Kumar, M. T. Islam
article en
3 citations

Abstract

Abstract Indoor photovoltaic (IPV) cells are designed to operate under low-intensity artificial light sources. Generally, artificial light sources have a narrow spectrum, which can be efficiently captured by a wide band gap absorber. However, existing wide band gap absorbers, such as amorphous silicon (a-Si), perovskite (MAPbX 3 ), suffer from toxicity and stability issues, making it essential to explore an alternative that is an earth-abundant, environmentally friendly. In this study, we used Vienna ab initio Simulation Package (VASP)-based ab-initio calculations to investigate Cu 2 BaSnS 4 (CBTS) materials, focusing on their crystal structure, optoelectronic properties, and performed SCAPS-based simulations for performance estimation. CBTS exhibits a direct band gap ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of ∼1.9 eV and high absorption coefficient ( α ∼ 10 5 cm −1 ) in the UV-visible spectrum, making it ideal for IPV applications. Detailed balance calculations predict remarkable solar cell efficiencies of 59.96% ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> = 1.9 eV) and 57.51% ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>g</mml:mi> </mml:mrow> </mml:msub> </mml:math> = 1.95 eV) under indoor light emitting diode (LED) and compact fluorescent light (CFL) lighting. The simulated efficiency exceeding 50% are attributed to the narrow emission spectrum of indoor light sources, which is efficiently absorbed by wide band gap CBTS. Key factors influencing efficiency include high shunt resistance (R Sh &gt; 10 6 Ω cm 2 ) and minimal impact of series resistance up to 100 Ω cm 2 . A key distinction between IPV and outdoor photovoltaics is the lower photo-generated carrier concentration in low-light conditions, leading to a higher ratio of trapped to photo-generated carriers. These findings highlight CBTS’s potential for next-generation indoor energy solutions.

Physica ScriptaVol. 100(5)
Sido Kanhu Murmu University (IN), SRM University (IN), Mahindra University (IN), Koneru Lakshmaiah Education Foundation (IN)
Openalex Percentile: Top 13%
Chalcogenide Semiconductor Thin Films
2.19
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