Epitaxial Antiferroelectric Bi<sub>2</sub>O<sub>2</sub>S Films with Superior Photoresponse

Two-dimensional bismuth oxychalcogenide is a rising material system with superior electronic properties. However, a lack of high-quality synthesis impedes the exploration of fundamental understanding and practical applications. This work presents high-quality epitaxial Bi<sub>2</sub>O<sub>2</sub>S films on (LaAlO<sub>3</sub>)<sub>0.3</sub>(Sr<sub>2</sub>TaAlO<sub>6</sub>)<sub>0.7</sub> with diverse properties by taking advantage of lattice compatibility. The atomically resolved sharp interface of Bi<sub>2</sub>O<sub>2</sub>S/(LaAlO<sub>3</sub>)<sub>0.3</sub>(Sr<sub>2</sub>TaAlO<sub>6</sub>)<sub>0.7</sub> heteroepitaxy is observed with the verification of centrosymmetric breaking through microscopic evidence and macroscopic characterizations. Such an epitaxial feature of the Bi<sub>2</sub>O<sub>2</sub>S film provides an essential step for applications compared to those of chemically synthesized nanomaterials. The interior polarization and piezoelectricity can be investigated through atomic-scale observation and RhB degradation of BOS. Meanwhile, this synthesized system can achieve a strong photoresponse with an on/off ratio of ∼10<sup>4</sup> and a responsivity of ∼60 mA/W in the range of red light (620-750 nm). With these advantages, the demonstrated epitaxial Bi<sub>2</sub>O<sub>2</sub>S shows a huge potential for applications in high-performance optoelectronic devices.

Authors

Institutions

Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-03-27
DOI
https://doi.org/10.1021/acsami.4c22419
Citations
5
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.59

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Epitaxial Antiferroelectric Bi2O2S Films with Superior Photoresponse

Chuan Lung Chuang, Rong Huang, Yu‐Lun Chueh, Jyh Ming Wu et al.
5 citations
ACS Applied Materials & Interfaces
2D Materials and Applications
2.59
article

Epitaxial Antiferroelectric Bi2O2S Films with Superior Photoresponse

Chuan Lung Chuang, Rong Huang, Yu‐Lun Chueh, Jyh Ming Wu, Ying‐Hao Chu, Yong-Jyun Wang, Chih‐Wei Luo, Wei‐Chun Lin, Jianwei Zhang, Yi‐Cheng Chen, Heng‐Jui Liu, Po-Chih Chu, Zhenzhong Yang, Yu‐Miin Sheu, Jiayuan Sun, Ki Soo Chang, Hsiang‐Lin Liu, Xin-Yun Chang, Helen Lai Wah Chan, Chia‐Chen Chung
article en
5 citations

Abstract

Two-dimensional bismuth oxychalcogenide is a rising material system with superior electronic properties. However, a lack of high-quality synthesis impedes the exploration of fundamental understanding and practical applications. This work presents high-quality epitaxial Bi<sub>2</sub>O<sub>2</sub>S films on (LaAlO<sub>3</sub>)<sub>0.3</sub>(Sr<sub>2</sub>TaAlO<sub>6</sub>)<sub>0.7</sub> with diverse properties by taking advantage of lattice compatibility. The atomically resolved sharp interface of Bi<sub>2</sub>O<sub>2</sub>S/(LaAlO<sub>3</sub>)<sub>0.3</sub>(Sr<sub>2</sub>TaAlO<sub>6</sub>)<sub>0.7</sub> heteroepitaxy is observed with the verification of centrosymmetric breaking through microscopic evidence and macroscopic characterizations. Such an epitaxial feature of the Bi<sub>2</sub>O<sub>2</sub>S film provides an essential step for applications compared to those of chemically synthesized nanomaterials. The interior polarization and piezoelectricity can be investigated through atomic-scale observation and RhB degradation of BOS. Meanwhile, this synthesized system can achieve a strong photoresponse with an on/off ratio of ∼10<sup>4</sup> and a responsivity of ∼60 mA/W in the range of red light (620-750 nm). With these advantages, the demonstrated epitaxial Bi<sub>2</sub>O<sub>2</sub>S shows a huge potential for applications in high-performance optoelectronic devices.

ACS Applied Materials & InterfacesVol. 17(14)
National Taiwan Normal University (TW), National Sun Yat-sen University (TW), National Yang Ming Chiao Tung University (TW), National Chung Hsing University (TW), National Tsing Hua University (TW), National Synchrotron Radiation Research Center (TW), Advanced Materials and Devices (United States) (US), East China Normal University (CN), National Taipei University (TW)
National Tsing Hua University, National Science and Technology Council
Openalex Percentile: Top 11%
2D Materials and Applications
2.59
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.