Phase Identification of Layered GaS by Polarization-Dependent Angle-Resolved Oblique Incident Second Harmonic Generation

Layered gallium sulfide (GaS), a material that has attracted much attention in the field of micro-nano optoelectronics recently, is predicted to have four stable stacking orders (β-, γ-, ε-, and δ-GaS) with close formation energies; β-GaS is the most considered, and other phases are seldom discussed. However, considering the ease of the phase transition in few-layer materials, the lack of accurate crystal phase identification prevents a full understanding of this material for specific applications requiring other crystal phases. Here, we report a novel in situ and nondestructive method to identify the phase of layered GaS by polarization-dependent angle-resolved oblique incident second harmonic generation (SHG). Through this method, we discovered the presence of γ-GaS with a portion of approximately one-sixth of the total samples. Our work has laid a foundation for the application of GaS, and our approach has established a technical guarantee for structural analysis of van der Waals layered materials.

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Publication Details

Journal
Nano Letters
Published
2025-03-27
DOI
https://doi.org/10.1021/acs.nanolett.5c00345
Primary Topic
Photorefractive and Nonlinear Optics
Type
article
Field-Weighted Citation Impact
0.00

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article

Phase Identification of Layered GaS by Polarization-Dependent Angle-Resolved Oblique Incident Second Harmonic Generation

Rongkuan Leng, Liujian Qi, Mingxiu Liu, Weiheng Zhong et al.
Nano Letters
Photorefractive and Nonlinear Optics
article

Phase Identification of Layered GaS by Polarization-Dependent Angle-Resolved Oblique Incident Second Harmonic Generation

Rongkuan Leng, Liujian Qi, Mingxiu Liu, Weiheng Zhong, Hanyu Zhang, Zhongling Lang, Ying Song, Jinluo Cheng, Xingang Zhao, Shaojuan Li, Wei Xin, Kainan Chang, Yanchao Wang, Weiming Wang, Yuwei Shan, Zhilin Gong, Jiawei Jing
article en

Abstract

Layered gallium sulfide (GaS), a material that has attracted much attention in the field of micro-nano optoelectronics recently, is predicted to have four stable stacking orders (β-, γ-, ε-, and δ-GaS) with close formation energies; β-GaS is the most considered, and other phases are seldom discussed. However, considering the ease of the phase transition in few-layer materials, the lack of accurate crystal phase identification prevents a full understanding of this material for specific applications requiring other crystal phases. Here, we report a novel in situ and nondestructive method to identify the phase of layered GaS by polarization-dependent angle-resolved oblique incident second harmonic generation (SHG). Through this method, we discovered the presence of γ-GaS with a portion of approximately one-sixth of the total samples. Our work has laid a foundation for the application of GaS, and our approach has established a technical guarantee for structural analysis of van der Waals layered materials.

Nano LettersVol. 25(14)
Northeast Normal University (CN), Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), Ministry of Education (ET), University of Chinese Academy of Sciences (CN)
Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, Education Department of Jilin Province, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Affordable and clean energy
Openalex Percentile: Top 95%
Photorefractive and Nonlinear Optics
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