Features of the formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6

In this paper, a current-voltage characteristics method is used to study the peculiarities of formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6. Using the obtained experimental data, a possibility of creating diode structures based on two-phase dispersed systems is confirmed. The configuration of the interface between the dispersed phases of the two-layer structure is shown to define the parameters of the potential barrier in a dispersed medium.

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Publication Details

Journal
Semiconductor Physics Quantum Electronics & Optoelectronics
Published
2025-03-26
DOI
https://doi.org/10.15407/spqeo28.01.019
Citations
1
Primary Topic
Thermal and Kinetic Analysis
Type
article
Field-Weighted Citation Impact
0.52
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article

Features of the formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6

D.V. Pekur, V.V. Ponomarenko, А.Г. Жук, И. А. Даниленко et al.
1 citations
Semiconductor Physics Quantum Electronics & Optoelectronics
Thermal and Kinetic Analysis
0.52
article

Features of the formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6

D.V. Pekur, V.V. Ponomarenko, А.Г. Жук, И. А. Даниленко, О.Б. Охріменко, Sergiy Lyubchyk, Andriy I. Lyubchyk, Yu. Yu. Bacherikov
article en
1 citations

Abstract

In this paper, a current-voltage characteristics method is used to study the peculiarities of formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6. Using the obtained experimental data, a possibility of creating diode structures based on two-phase dispersed systems is confirmed. The configuration of the interface between the dispersed phases of the two-layer structure is shown to define the parameters of the potential barrier in a dispersed medium.

Semiconductor Physics Quantum Electronics & OptoelectronicsVol. 28(01)
Openalex Percentile: Top 41%
Thermal and Kinetic Analysis
0.52
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