Atomic layer deposition of Al <i>x</i> Ti1 <i>−x</i> N via co-evaporation of metal precursors

Different approaches are used in tailoring properties of thin films to meet the requirements of specific applications. This study comprises work done on atomic layer deposition of AlxTi1−xN employing the co-evaporation approach using tris-dimethylamido aluminum [Al(NMe2)3], tetrakis(dimethylamido)titanium (IV) [Ti(NMe2)4], and ammonia (NH3) plasma. High Al-content, low impurity (O and C, both &amp;lt;5 at. %) films with uniform grain size distribution and dense morphology were deposited. The as-deposited films were x-ray amorphous, but mixed crystallographic phases were observed when the films were annealed at 700 °C. The deposited aluminum-rich AlxTi1−xN films show an alternative way for ternary material depositions.