High Spin Hall Efficiency and Dresselhaus‐Like Torque in Large‐Area Few‐Layer MoTe ₂

Abstract Spin–orbit torque (SOT) has been extensively investigated as the writing method for the next generation of magnetic random‐access memory (MRAM), owing to its high endurance and ultrafast switching dynamics. Throughout the development of SOT‐MRAM, enhancing the charge‐to‐spin conversion efficiency of spin source materials has been a central focus. MoTe 2 , a representative material in the family of layered transition metal dichalcogenides (TMDs), has demonstrated a substantial SOT efficiency along with unconventional spin currents. However, previous studies have been limited to mechanical exfoliation techniques, impeding its practical applications. Here, the manufacturable recipe of chemical vapor deposition (CVD) is developed to fabricate wafer‐scale MoTe 2 thin films. A large SOT efficiency of 0.24 is achieved in 14‐layer MoTe 2 . The potential presence of damping‐like torque is also demonstrated with Dresselhaus‐like symmetry, approximately one‐fifth as strong as that of conventional damping‐like SOT. This work paves the way for employing MoTe 2 for wafer‐scale spintronic device developments.