Impact of ZnS/V Doping Amount in PVA/CMC/PEG Blended Polymer: Tuning Dielectric Properties and Radiation Shielding Performance

In order to use PVA/CMC/PEG/x wt% ZnS/V blended polymers in a variety of electrical, electronic, and radiation shielding applications, this research attempts to examine their AC electrical and radiation shielding capabilities. The structure and crystallite size of powder filler (ZnS/V) were inspected utilizing the X-ray diffraction equipment. The structure and morphology of undoped and doped PVA/CMC/PEG/ x wt% ZnS/V, the impact of ZnS/V loading ratio on the dielectric constant, a c conductivity and electric modulus of PVA/CMC/PEG blended polymer were explored. The optimal energy density value can be achieved with a blend doped with 3 wt% ZnS/V. ZnS/V resulted in an enhancement of both mass attenuation coefficient (MAC) and linear attenuation coefficient (LAC) throughout the whole energy spectrum. Analogous to half-value layer (HVL), the augmentation of ZnS/V concentration in the host blended polymer resulted in a decline of tenth value layer (TVL) and mean free path (MFP) values. The influence of ZnS/V doping ratio on the effective conductivity ( C eff ), effective atomic number ( Z eff ), effective electron density ( N eff ), material’s atomic and electronic cross sections (ACS and ECS) and energy buildup factors of the host blended polymer was explored. The fast neutron removal cross-section (FNRCS) value of the host blend rose with a rise in ZnS/V doping levels.