ScAlN/GaN-on-Si (111) HEMTs for RF applications
Abstract ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher two-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by ammonia-source molecular beam epitaxy on Si (111), is processed into transistors. The 2DEG density is 1.6 × 10 13 cm −2 with a mobility μ ∼ 621 cm 2 V −1 s −1 . A 75 nm gate length transistor exhibits a drain current density of 1.35 A mm −1 , a transconductance of ∼284 mS mm −1 , a current gain cutoff frequency of 82 GHz and a maximum oscillation frequency of 112 GHz.
Authors
- Maxime Hugues (ORCID: https://orcid.org/0000-0001-6457-7421)
- Yassine Fouzi (ORCID: https://orcid.org/0000-0003-1542-3965)
- Y. Cordier (ORCID: https://orcid.org/0000-0003-3720-9409)
- Nagesh Bhat (ORCID: https://orcid.org/0000-0002-3805-2100)
- S. El Whibi
- Florian Bartoli (ORCID: https://orcid.org/0000-0002-4643-0968)
- Z. Bougrioua (ORCID: https://orcid.org/0000-0003-3579-7091)
- Marie Lesecq
- Jean Claude De Jaeger
- Nicolas De France
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-03-26
- DOI
- https://doi.org/10.35848/1882-0786/adc5db
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 3.77
Funders
- European Commission
- Agence Nationale de la Recherche
- Electronic Components and Systems for European Leadership