High-Power Microwave Damage Protection Design of GaN HEMT by Gate Structure Optimization

GaN HEMT devices have promising applications in the field of RF front-end technology but are often susceptible to electromagnetic interference from the environment or targeted by attacks from electromagnetic weapons. This paper proposes a design methodology based on gate structure optimization, introducing three types of GaN HEMT gate structures: I-shaped, T-shaped, and V-shaped gates. The electrothermal responses of these devices under high-power microwave injection at varying amplitudes were simulated and analyzed. The results indicate that the heat generation mechanisms and temperature distributions differ among the devices, with the V-shaped gate device exhibiting the longest burnout time. This study provides insights for the reliability design and electromagnetic protection of GaN HEMT devices.